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Quality Bis(Dimethylamino)Methylsilane (Cas No. 22705-33-5) factory
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Quality Bis(Dimethylamino)Methylsilane (Cas No. 22705-33-5) factory
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Bis(Dimethylamino)Methylsilane (Cas No. 22705-33-5)

Specifications
Highlight:

High purity Amino Silanes

,

Polymer Synthesis bis(dimethylamino)methylsilane

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22705-33-5 cas

Product Name:
BIS(DIMETHYLAMINO)METHYLSILANE
Appearance:
Clear Liquid
MF:
C5H16N2Si
MW:
132.28
M.P:
<0°C
B.P.:
112 °C
Density:
0.798 G/mL At 20 °C(lit.)
Flash point:
-3°C
Key Attributes
Brand Name: SISO
Model Number: 22705-33-5
Place of Origin: China
Payment Terms: T/T
Product Description

1. High-efficiency Silylation Derivatization Reagent 

This product is a high-activity bifunctional aminosilane containing two dimethylamino active groups. It can rapidly and thoroughly react with active hydrogen groups including hydroxyl, carboxyl and amino groups under mild conditions, achieving efficient silylation derivatization. It is widely used in sample pretreatment for chromatographic analysis and structural modification of fine organic chemicals.

2. Precursor for High-purity Silicone Polymer Synthesis 

 It serves as a high-purity precursor for the synthesis of functional silicone resins and polysiloxane polymers. The dual reactive amino groups enable controllable hydrolysis and polycondensation reactions, effectively regulating polymer molecular weight and crosslinking structure, and preparing high-uniformity, low-defect silicone polymer materials.

3. Interface Coupling & Compatibility Modifier 

With dual reactive functional sites, it can build stable chemical bridging bonds between organic polymer matrices and inorganic substrates such as silica, glass fiber and metal oxide fillers. It significantly improves interfacial binding force and phase compatibility, reduces interfacial voids and defects, and enhances the overall mechanical properties and weather resistance of composite materials.

4. Semiconductor Surface Passivation & Ultra-clean Protection 

Featuring ultra-low metal ion residue, high reaction activity and uniform film-forming performance, it is suitable for surface passivation treatment of semiconductor wafers and precision electronic devices. It can form a compact and inert hydrophobic insulating layer on material surfaces, effectively isolating moisture, oxygen and micro-impurities, and improving the stability and service life of electronic components.
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